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| HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC= 25C TC= 25C, pulse width limited by TJM TC= 25C TC= 25C TC= 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C IXFN 39N90 VDSS ID25 RDS(on) = = = 900 V 39 A 0.22 D trr 250 ns G S S Maximum Ratings 900 900 20 30 39 154 39 64 4 5 700 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A mJ J V/ns W C C C V~ V~ G = Gate S = Source D = Drain TAB = Drain S D G miniBLOC, SOT-227 B (IXFN) E153432 S Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features * International standard packages * miniBLOC, with Aluminium nitride isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 900 3.68 2.5 -0.009 200 TJ = 25C TJ = 125C 100 2 0.22 5.0 V V/K V V/K nA A mA VDSS BVDSS VGH(th) VGH(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 3 mA Temperature dependence V DS = VGS, ID = 8 mA Temperature dependence V GS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % * * * * Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages * Easy to mount * * Space savings High power density 98628B (9/01) (c) 2001 IXYS All rights reserved IXFN 39N90 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 45 9200 VGS = 0 V, VDS = 25 V, f = 1 MHz 1360 380 45 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), 68 125 30 390 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 65 190 0.18 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W A B C D E F G H J K L M N O P Q R S T U miniBLOC, SOT-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 15 V; ID = 0.5 * ID25, pulse test M4 screws (4x) supplied Dim. Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 39 154 1.3 250 A A V ns C A IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 2.0 9.0 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFN 39N90 Figure 1. Output Characteristics at 25OC 80 70 60 TJ = 25OC VGS = 9V 8V 7V 6V Figure 2. Output Characteristics at 125OC 45 40 35 TJ = 125OC VGS = 9V 8V 7V 6V 5V ID - Amperes ID - Amperes 5V 50 40 30 20 10 0 4V 30 25 20 15 10 5 0 4V 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 2.4 2.2 VGS = 10V Figure 4. RDS(on) normalized to 0.5 ID25 value vs.TJ 2.4 VGS = 10V 2.2 RDS(ON) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 RDS(ON) - Normalized TJ = 125OC 2.0 1.8 ID = 39A ID =19.5A 1.6 1.4 1.2 TJ = 25OC 30 40 50 60 70 80 1.0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 40 35 30 Figure 6. Admittance Curves 50 40 ID - Amperes 25 20 15 10 ID - Amperes 30 20 10 TJ = 125oC 5 0 TJ = 25oC -50 -25 0 25 50 75 100 125 150 0 3.5 4.0 4.5 5.0 5.5 6.0 TC - Degrees C VGS - Volts (c) 2001 IXYS All rights reserved IXFN 39N90 Figure 7. Gate Charge 10 8 VDS = 450 V ID = 19.50A IG = 10 mA Figure 8. Capacitance Curves 18 16 Ciss Capacitance - pF 14 12 10 8 6 4 2 Coss Crss f = 100kHz VGS - Volts 6 4 2 0 0 50 100 150 200 250 300 350 400 0 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS = 0V 80 ID - Amperes TJ = 125OC 60 TJ = 25OC 40 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Figure 10. Transient Thermal Resistance 1.000 R(th)JC - K/W 0.100 Single Pulse 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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